Technological challenges of advanced CMOS processing and their impact on design aspectsCLAEYS, Cor.International Conference on Embedded Systems DesignInternational Conference on VLSI Design. 2004, pp 275-282, isbn 0-7695-2072-3, 1Vol, 8 p.Conference Paper

Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETsPAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio; SIMOEN, Eddy et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 10, pp 2236-2242, issn 0018-9383, 7 p.Article

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency NoiseSIMOEN, Eddy; VELOSO, Anabela; HIGUCHI, Yuichi et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3849-3855, issn 0018-9383, 7 p.Article

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETsPAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio; SIMOEN, Eddy et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1194-1200, issn 0038-1101, 7 p.Article

Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operationPAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio; SIMOEN, Eddy et al.Solid-state electronics. 2005, Vol 49, Num 8, pp 1274-1281, issn 0038-1101, 8 p.Article

Study of the linear kink effect in PD SOI nMOSFETsGHEDINI DER AGOPIAN, Paula; MARTINO, Joäo Antonio; SIMOEN, Eddy et al.Microelectronics journal. 2007, Vol 38, Num 1, pp 114-119, issn 0959-8324, 6 p.Article

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETSGHEDINI DER AGOPIAN, Paula; MARTINO, Joäo Antonio; SIMOEN, Eddy et al.Microelectronics journal. 2006, Vol 37, Num 8, pp 681-685, issn 0959-8324, 5 p.Article

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devicesDORIA TREVISOLI, Renan; MARTINO, João Antonio; SIMOEN, Eddy et al.Microelectronics and reliability. 2012, Vol 52, Num 3, pp 519-524, issn 0026-2714, 6 p.Article

Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substratesSIMOEN, Eddy; ENEMAN, Geert; VERHEYEN, Peter et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 5, pp 1039-1047, issn 0018-9383, 9 p.Article

Analytical model for the impact of the twin gate on the floating-body-related low-frequency noise overshoot in silicon-on-insulator MOSFETsLUKYANCHIKOVA, Nataliya; GARBAR, Nikolay; SMOLANKA, Alexander et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 12, pp 3118-3128, issn 0018-9383, 11 p.Article

Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory CellsSIMOEN, E; DE ANDRADE, Maria Glória Caño; AOULAICHE, M et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1272-1278, issn 0018-9383, 7 p.Article

On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge p⁺n JunctionsSIMOEN, Eddy; DE STEFANO, Francesca; ENEMAN, Geert et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 562-564, issn 0741-3106, 3 p.Article

A two-dimensional model for interface coupling in triple-gate transistorsAKARVARDAR, Kerem; MERCHA, Abdelkarim; CRISTOLOVEANU, Sorin et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 4, pp 767-775, issn 0018-9383, 9 p.Article

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of RecessedBARGALLO GONZALEZ, Mireia; SIMOEN, Eddy; VISSOUVANADIN, Bertrand et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1418-1423, issn 0018-9383, 6 p.Article

Radiation tolerance of Si_1―yC_y source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrationsNAKASHIMA, Toshiyuki; ASAI, Yuki; HORI, Masato et al.Thin solid films. 2014, Vol 557, pp 307-310, issn 0040-6090, 4 p.Conference Paper

Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETsANTONIO PAVANELLO, Marcelo; DE SOUZA, Michelly; ANTONIO MARTINO, Joao et al.Solid-state electronics. 2012, Vol 70, pp 39-43, issn 0038-1101, 5 p.Conference Paper

Ab initio investigation of phosphorus and boron diffusion in germaniumJANKE, C; JONES, R; COUTINHO, J et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 324-327, issn 1369-8001, 4 p.Conference Paper

Density-functional theory study of Au, Ag and Cu defects in germaniumCARVALHO, A; COUTINHO, J; JONES, R et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 340-343, issn 1369-8001, 4 p.Conference Paper

Diffusion and activation of phosphorus in germaniumTSOUROUTAS, P; TSOUKALAS, D; ZERGIOTI, I et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 372-377, issn 1369-8001, 6 p.Conference Paper

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFETs on plastic substrates and GaN epilayersNOZAKI, S; KIMURA, S; KOIZUMI, A et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 384-389, issn 1369-8001, 6 p.Conference Paper

Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germaniumALPER SAHINER, Mehmet; WOICIK, Joseph C; KURP, Timothy et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 245-249, issn 1369-8001, 5 p.Conference Paper

Metal implants-dependent carrier recombination characteristics in GeGAUBAS, E; ULECKAS, A; VANHELLEMONT, J et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 291-294, issn 1369-8001, 4 p.Conference Paper

Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approachBOUDJELIDA, B; SOBIH, A; BOULOUKOU, A et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 398-401, issn 1369-8001, 4 p.Conference Paper

Oxidation characteristics of Si_0.85Ge_0.15 nanowiresKIM, Sang-Yeon; KIM, Sun-Wook; CHANG, Hyun-Jin et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 182-186, issn 1369-8001, 5 p.Conference Paper

Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substratesTREVISOLI DORIA, Rodrigo; MARTINO, João Antonio; SIMOEN, Eddy et al.Solid-state electronics. 2013, Vol 90, pp 121-126, issn 0038-1101, 6 p.Conference Paper